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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2979 DESCRIPTION With TO-220C package High VCBO Fast switching speed. APPLICATIONS For high voltage ,high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector dissipation Collector-base voltage Collector-emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE 900 800 7 3 6 1.5 UNIT V V V A A A W ae ae Emitter-base voltage Open collector Collector current-peak TC=25ae 40 150 -55~150 Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A; RBE= IE=10mA ; IC=0 IC=0.75A; IB=0.15A IC=0.75A; IB=0.15A VCB=750V ;IE=0 VCE=650V; RBE= IC=0.3A ; VCE=5V IC=1.5A ; VCE=5V 15 ,L=100mH MIN 800 7 2SC2979 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO ICEO hFE-1 hFE-2 TYP. MAX UNIT V V 1.0 1.5 100 100 |I |I V V A A Switching times ton tstg tf Fall time Turn-on time CHA IN Storage time E SEM NG OND IC TOR UC 7 1.0 3.0 1.0 |I |I |I s s s VCCO 250V; IC=1.5A IB1=0.3A;IB2=-0.75A 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2979 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2979 CHA IN E SEM NG OND IC TOR UC 4 |
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